SSN3541 0.1 a, 30 v, r ds(on) 8 ? n channel enhancement mosfet elektronische bauelemente 09-aug-2012 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free features low on-resistance fast switching speed drive circuits can be simple parallel use is easy low voltage drive makes this device ideal for portable equipment application interfacing switching marking package information package mpq leader size sot-723 8k 7 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current i d 100 ma total power dissipation p d 0.15 w thermal resistance junction-ambient r ja 833 c / w operating junction & storage temperature range t j , t stg 150, -55~150 c notes: 1. pw 10 s ,duty cycle 1% sot-723 ref. millimeter ref. millimeter min. max. min. max. a 1.150 1.250 f 0.170 0.270 b 0.750 0.850 g 0.270 0.370 c - 0.500 h 0 0.050 d 1.150 1.250 i - 0.150 e 0.800typ. kn 1 11 1 gate 2 22 2 source 3 33 3 drain
SSN3541 0.1 a, 30 v, r ds(on) 8 ? n channel enhancement mosfet elektronische bauelemente 09-aug-2012 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 30 - - v v gs =0, i d =10 a gate threshold voltage v gs(th) 0.8 - 1.5 v v ds =3v, i d =100 a gate-body leakage current i gss - - 1 a v ds =0, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =30v, v gs =0 drain-source on-resistance 1 r ds(on) - 5 8 v gs =4v, i d =10ma - 7 13 v gs =2.5v, i d =1ma forward transconductance 1 g fs 20 - - ms v ds =3v, i d =10ma input capacitance c iss - 13 - pf v ds =5v, v gs =0, f=1mhz output capacitance c oss - 9 - reverse transfer capacitance c rss - 4 - turn-on delay time t d(on) - 15 - ns v dd =5v i d = 10ma v gs =5v r l = 500 r g =10 rise time t r - 35 - turn-off delay time t d(off) - 80 - fall time t f - 80 -
SSN3541 0.1 a, 30 v, r ds(on) 8 ? n channel enhancement mosfet elektronische bauelemente 09-aug-2012 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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